GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
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منابع مشابه
Characteristics of GaAsN/GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates
Pseudomorphic four-period GaAs0.978N0.022/GaAs0.78Sb0.22 type-II multiquantum well structures were grown on 100 GaAs substrates by metalorganic vapor phase epitaxy at 530 °C. The GaAs0.978N0.022 layers were grown at a V/III ratio of 685 and N/V ratio of 0.96, whereas the GaAs0.78Sb0.22 was grown at a V/III ratio of 3.8 and Sb/V ratio of 0.8. The superlattice peaks in the x-ray diffraction -2 sc...
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Manuscript received September 27, 1999. Manuscript revised October 20, 1999. † The authors are with NTT Cyber Space Laboratories, Musashino-shi, 180-8585 Japan. a) E-mail: [email protected] SUMMARY We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure con...
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ژورنال
عنوان ژورنال: MRS Internet Journal of Nitride Semiconductor Research
سال: 1997
ISSN: 1092-5783
DOI: 10.1557/s109257830000140x